Magwel is the leader in 3D semiconductor-metal interconnect co-simulation and extraction solutions for IC's.

Breakthrough 3D Co-simulation and Extraction Technology

Magwel's simulator co-simulates semiconductors and metal interconnect with 3D accuracy of a field solver and unprecedented speed and capacity. Its unique patented simulator models semiconductor drift-diffusion equations together with Maxwell's equations in metal in the same simulation providing accuracy within 2% of silicon. Self-consistent modeling of parasitics at the interfaces between semiconductors and metal together with the ability to co-simulate in full 3D active devices with passives and interconnect are critical in nanometer technologies and high-speed analog, RF and digital designs.

Other solutions that provide a decoupled simulation of semiconductors and metal are no longer adequate for process nodes of 65nm and below since their accuracy can be easily off by 30% or more.

Magwel's recent advances in smart 3D meshing and 64-bit numerical algorithms have enabled breakthroughs of 10x or more in simulation capacity and speed. Because of these breakthroughs Magwel's tools can now be used to address design problems while traditional device simulators have been limited to TCAD applications.

Solution Flows

Building on this advanced simulation technology Magwel developed several integrated solution flows (see products section).